Latecomers come to FRAM to help China's high-end medical electronic system key design
Now, when you are in some hospitals, you may see doctors taking a tablet for medical treatment and rounds. This is not an ordinary tablet, it uses a professional panel that is resistant to alcohol. Did you know that in the hospital, in addition to alcohol protection, electronic equipment must also resist radiation? This is because hospitals often need to sterilize RFID-labeled items, and Fujitsu Semiconductor can resist up to 50kGy gamma. Radiation-sterilized non-volatile random access memory - FRAM (Ferroelectric Random Access Memory) RFID will not be destroyed after being disinfected by radiation.
In addition to anti-radiation, FRAM features high speed/high read/write durability and low power consumption. These unique advantages make FRAM stand out in the medical field and win the favor of a wider range of applications and users. "FRAM has long been used in CT scanners and other large devices, and its use in smaller medical devices is increasing. For the purpose of certification for production control of medical devices and biopharmaceuticals, RFID embedded with FRAM is also It has become more and more popular. "At the 7th China International Medical Electronics Technology Conference (CMET2014) held recently, Mr. Matsuoka Masahiro, Vice President of System Memory Division of Fujitsu Semiconductor, the world's leading FRAM supplier, said.
Figure 1. Mr. Masahiro Matsumoto, Vice President of Fujitsu's Semiconductor Systems Memory Division, gave a speech at CMET2014.
In the field of medical electronics related to people's lives, there is an urgent need for a memory that can store data even when the power is off, and to operate at a high speed with low power consumption, requiring the memory to have high read/write cycle durability. In addition, because gamma ray and electronic sterilization are also common in the medical field, this requires the memory to be radiation resistant, and the unique advantages of FRAM can meet the demanding requirements of all these medical fields.
Compared to traditional non-volatile memories, FRAM consumes much less power and writes faster. For similar writes, FRAM consumes only 1/1000 of the EEPROM. The write time of FRAM is 1/40000 of EEPROM, reaching the level of traditional volatile memory such as SRAM and DRAM. Moreover, FRAM's read/write endurance is far superior to EEPROM and Flash memory. EEPROM and Flash memory can write about 1 million times (10^6 times), FRAM can write up to 1 trillion times, or write times can reach more than 1 million times of the first two memories.
Figure 2. The advantages of ferroelectric FRAM over E2PROM.
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